CIGS Thin Film Solar Cell

Origin	Korea
Model Number	CIGS 5000 Series
HS CODE	8479.89-2020
Minimum Order	1 set
Lead Time	Within 3month after order
Payment Terms	Within 1month after setup

Features

CIGS 5000 Series as R&D equiprent for compound thin film solar cell is consist of Transfer, Load Lock, MBE, back contact Squttering and window sputtering Chambers.

In CIGS series process Mo-back contact was deposited on a soda lime glass by sputtering system and the CIGS absorber layer over the Mo back contact growth technique using multi-source(Cu, In, Ga, Se) evaporation method. Then window layer consisted of ZnO or ITO thin film is coated by RF sputtering system.

Specifications

• Deposition thickness
  • up to several ten thousands A for Mo, CIGS and ZnO film
• Film thickness uniformity
  • ≤ ±5% on 100mm x 100mm substrate
• Film sheet resistance uniformity
  • ≤ ±5% on 100mm x 100mm substrate(for Mo film)
• In-situ temperature monitoring software of depositing CIGS film
• Temperature uniformity
  • ≤ ±3% on 100mm x 100mm substrate(on plate and Z-direction)
• Substrate
  • Glass and flexible metal, 100mm x 100mm
• Deposition
  • Mo film deposition by DC magnetron sputtering method
  • CIGS film deposition by MBE
  • Intrinsic and n type ZnO films by RF magnetron sputtering method
• Throughput
  • 100mm x 100mm x 1 sheet/ batch, using by loadlock
• Vacuum chamber
  • Six-Way Transfer chamber, Load Lock chamber, MBE chamber, Mo and ZnO sputtering chamber