PE-CVD for Silicon Wafer Solar Cell

Model Number

BCS5000 Series

Features

BCS5000 Plasma enhanced CVD system is batch-production equipment.
That supports the application of silicon based thin film process of fearing step coverage and gap filling required during semiconductor fabrication and solar cell device processes, Including the applications of passivisation, isolation and dielectric insulation depositions.

Application

• A-Si, Sio2, Si3N4 Deposition
• Passivisation, isolation
• Solar Cell Device

Specification

• Sample Size : 156mm x 156mm x 4PCS
• Power Source : RF 13.56MHz
• Deposition Type : PECVD
• Plasma Type : Direct Plasma
• Substrate Temperature : Max. 450°C
• Working Pressure :  30m Torr ~ 5Torr
• Film Thickness Uniformity : ±2.5%
• Film Thickness Uniformity Wafer to wafer : ±2.5%
• Refractive Index : 1.9 ~ 2.3
• Pump Station : Booster + Rotary pump