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Model Number |
ARS 5000 Series |
Features
- Reactive Ion etching(RIE) is an etching technology used in micro fabrication. - It uses chemically reactive plasma to remove material deposited on wafers. - High0energy ions from the plasma attack the wafer surface and react with it.
Application
- Silicon etching
- Dielectrics etching(SiO2, Si3N4, etc)
- Polyamide etching
Specifications
- Substrate Size : Piece to 6inch
- Max. Temperature : 700°C (On Heater)
- Process Gases Nozzle & RF Plasma Source Effective Area : 6inch
- RF Power Supply : 13.56MHz, 600W
- Gas Flow System
-Flow Control Range : 0~100 scum -Gas : Ar, O2, SF6, CHF3(4Channel + Option) -Gas Panel in Jungle Box
- All System Control using PLC Based Touch Panel(TFT 256Color)
- Ultimate Pressure : <1 x 10-6 Torre within 10 min.
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