Standard ICP-RIE System

Model Number

IRS5000 Series

Features

IRS5000 High density plasma etching system is a standard type that supports the application of general metal & dielectric material film & III-V compound Material etching process for the field of semiconductor, Optical, Nano and MEMS Device.

Application

• Metal etching
• Al2O3, Si, SiO2, Si3N4 Etching
• Ashing Process
• MEMS Application

Specifications

• Plasma Source : Specially Designed Antenna Module for High Density Plasma
• Sample Capacity : 4", 6" Wafer
• Source(ICP) Power : RF 1000W
• Bias Power : RF 600W
• High Vacuum Pumping system : Turbo Molecular Pump + Mechanical Rotary Pump
• Sample Loading/Unloading : Vacuum Load-lock system
• Full Automation system(optional)
• Plasma Density : > 5 x 10¹¹/cm³
• Ultimate Pressure : < 5 x 10^-6 Torr within 1 hour
• Etching Uniformity : <± 5% at 6 inch Area