Standard PE-CVD System

Model Number

SCS 5000 Series

Features

Plasma Enhanced Chemical Vapor Deposition(PECVD) is a process used to deposit thin films from a gas state(vapor) to a solid state on some substrate. There are some chemical reactions involved in the process which occur after creation of a plasma of the reacting gases.

Application

• SiOx, SixNy, a-Si etc.
• Passivisation, isolation
• Solar Cell Device

Specifications

• Substrate Size : 6inch
• Max. Temperature : 700°C(On Heater)
• Substrate to Gas Nozzle Distance : 30mm ~ 100mm Adjustable(Manual)
• Power Source : RF 13.56MHz
• Gas Flow System
  Flow Control Range : 0~100 sccm
  Gas : SiH4, NH3, N2O, Ar, O2, CHF3(For Cleaning)
• Gas Scrubber
• Film Thickness Uniformity
  within wafer : <±5% within 6inch wafer
  Run to Run : < ±5%
• Ultimate Pressure : <1 x 10-5 Torr within 10min